NMOS UV EEPROM 64K (8Kx8) 300ns DIP-28
NMOS UV EEPROM 64K (8Kx8) 300ns DIP-28, NMOS UV EEPROM 64K (8Kx8) 300ns DIP-28 Features Organized as 8192 words by 8-bits, fully decoded Fast access time: 300 ns Simple programming requirements Single location programming Programs with Quick Pro Low power requirement: 550mW active; 193mW standby No clock required, fully static operation TTL compatible inputs/outputs Three-state output with OR-tie capability Output Enable G pin for simplified memory expansion DIP-28