N-Channel IGBT MOSFET Transistor 600V 63A Through Hole TO-247-3
N-Channel IGBT MOSFET Transistor 600V 63A Through Hole TO-247-3, N-Channel IGBT MOSFET Transistor 600V 63A Through Hole TO-247-3 Specifications Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 63 A Current - Collector Pulsed (Icm): 252 A Vce(on) (Max) @ Vge, Ic: 1. 8V @ 15 V, 30 A Power - Max: 208 W Switching Energy: 1.05mJ (on), 2.5 mJ (off) Input Type: Standard Gate Charge: 162 nC Reverse Recovery Time (trr): 60 ns Operating Temperature: -40C to 150C (TJ) Mounting Type: Through Hole Package: TO-247-3 Base Number: ISL9R860